Electron Shuttling Model (Q4610): Difference between revisions

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quantum dynamical model of an electron to be shuttled in a Silicon QuBus device
quantum dynamical model of an electron to be shuttled in a silicon quBus device
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Property / contains: Quantum Lindblad Equation / rank
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media legend: The clavier gate electrodes on the top surface generate a moving array of QD potentials (English)
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media legend: Top view on the Si-QuBus with the four different clavier gate sets highlighted in color (English)

Latest revision as of 11:44, 12 February 2025

quantum dynamical model of an electron to be shuttled in a silicon quBus device
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English
Electron Shuttling Model
quantum dynamical model of an electron to be shuttled in a silicon quBus device

    Statements

    Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.
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    3082a.jpg
    764 × 415; 48 KB
    The clavier gate electrodes on the top surface generate a moving array of QD potentials (English)
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    3082b.jpg
    754 × 319; 42 KB
    Top view on the Si-QuBus with the four different clavier gate sets highlighted in color (English)
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