User:Koprucki:Examples:myTest: Difference between revisions
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Revision as of 11:22, 6 February 2025
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Schematic illustration of the Si-QuBus device. The clavier gate electrodes on the top surface generate a moving array of QD potentials. -
Top view on the Si-QuBus with the four different clavier gate sets highlighted in color.
Electron Shuttling Model is a quantum dynamical model of an electron to be shuttled in a silicon quBus device.
Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.
The Electron Shuttling Model contains the following mathematical expressions: {{#sparql: SELECT ?Formula ?defining_formulation
- Q4610 refers to Electron Shuttling Model
- P715 refers to contains
- P29 refers to defining formulation
WHERE {
wd:Q4610 wdt:P715 ?IDFormula.
?IDFormula rdfs:label ?Formula.
?IDFormula wdt:P29 ?defining_formulation
} | chart=bordercloud.visualization.DataTable | log=2 }}
The Electron Shuttling Model is applied by the following computational tasks:
{{#sparql: PREFIX target1: <https://portal.mardi4nfdi.de/entity/Q6534342> SELECT ?Computational_Task WHERE {
target1: wdt:P147 ?URL.
?URL rdfs:label ?Label
BIND(CONCAT("<a href=", STR(?URL), ">", STR(?Label) ,"</a>") as ?Computational_Task)
} | endpoint=https://query.portal.mardi4nfdi.de/proxy/wdqs/bigdata/namespace/wdq/sparql | chart=bordercloud.visualization.DataTable | log=2 }}
