Electron Shuttling Model (Q4610): Difference between revisions

From MaRDI portal
Changed claim: local image (P1088): 3082b.jpg
Changed claim: local image (P1088): 3082a.jpg
Property / local image: 3082a.jpg / qualifier
 
media legend: The clavier gate electrodes on the top surface generate a moving array of QD potentials (English)
Property / local image: 3082a.jpg / qualifier
media legend: The clavier gate electrodes on the top surface generate a moving array of QD potentials. (English)
 

Revision as of 14:19, 7 February 2025

quantum dynamical model of an electron to be shuttled in a Silicon QuBus device
Language Label Description Also known as
English
Electron Shuttling Model
quantum dynamical model of an electron to be shuttled in a Silicon QuBus device

    Statements

    Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.
    0 references
    0 references
    3082a.jpg
    764 × 415; 48 KB
    The clavier gate electrodes on the top surface generate a moving array of QD potentials (English)
    0 references
    3082b.jpg
    754 × 319; 42 KB
    Top view on the Si-QuBus with the four different clavier gate sets highlighted in color. (English)
    0 references

    Identifiers