Electron Shuttling Model

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User:Koprucki:Examples:myTest



quantum dynamical model of an electron to be shuttled in a silicon quBus device

The clavier gate electrodes on the top surface generate a moving array of QD potentials
Top view on the Si-QuBus with the four different clavier gate sets highlighted in color




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The Electron Shuttling Model contains the following mathematical expressions with quantities:

Schrödinger Equation (Time Dependent) it|ψ(t)=H^|ψ(t)
H symbol represents Quantum Hamiltonian Operator
symbol represents Planck Constant
ψ(t) symbol represents Quantum State Vector (Dynamic)
t symbol represents Time
Schrödinger Equation (Time Independent) H^|ψn=En|ψn
En symbol represents Quantum Eigen Energy
H symbol represents Quantum Hamiltonian Operator
ψn symbol represents Quantum State Vector (Stationary)
n symbol represents Quantum Number
Laplace Equation For The Electric Potential (ϵsϕ)=0
ϵs symbol represents Permittivity (Dielectric)
ϕ symbol represents Electric Potential
Quantum Hamiltonian (Electric Charge) H=H0+qϕ
H0 symbol represents Quantum Hamiltonian Operator
ϕ symbol represents Electric Potential
q symbol represents Electric Charge
Dirichlet Boundary Condition For Electric Potential ϕ(r,t)|Γk=ϕ0+Uk(t)
Uk symbol represents Applied External Voltage
Γk symbol represents Electrode Interfaces
ϕ symbol represents Electric Potential
t symbol represents Time
Neumann Boundary Condition For Electric Potential nϕ(r,t)|ΓN=0
ΓN symbol represents Electrode Interfaces
ϕ symbol represents Electric Potential
t symbol represents Time
Periodic Boundary Condition For Electric Potential ϕ(r,t)=ϕ(r+L,t)
L symbol represents Length Of Unit Cell
ϕ symbol represents Electric Potential
t symbol represents Time

The Electron Shuttling Model is applied by the following computational tasks:

Optimal Control
Quantum Time Evolution
Quantum Stationary States
Semiconductor Charge Neutrality