Mathematical Model Collection Template

Title: "Model for Electric Potential for Gate Electrodes in a Quantum Bus"

Authors:

• family-names: Koprucki
  

given-names: Thomas
orcid: https://orcid.org/0000-0001-6235-9412

• family-names: Shehu
  

given-names: Aurela
orcid: https://orcid.org/0000-0002-1994-0612

Date-Released: 2024-04-05
Version: 1.0.0

Computational Task CT1: Calculation of the electric potential

Description:
For a given set of gate voltages entering the boundary condition F3, solve the Poisson equation F1 with the material law F2 together with the boundary conditions F3 and F4. The device structure enters the material law F2 by the spatial profile of the relative permittivity $\varepsilon ({\boldsymbol {r}})$.
Formulations: F1, F2, F3, F4
Input: $U_{k}^{tot}$, k = 1:6, F2
Output: $\Phi$

Relations between Mathematical Formulations and Computational Tasks:
F2 Contained As Assumption In CT1.
F3 Contained As Boundary Condition In CT1.
F4 Contained As Boundary Condition In CT1.

Publication

P1: WIAS-Preprint 3082

DOI: 10.20347/WIAS.PREPRINT.3082

Relations between Mathematical Model and Publication:

MM1 Used In P1

Relations between Computational Task and Publication:

CT1 Documented In P1

Research Field

RF1: Semiconductor Physics

WikiData: Q4483523

Research Problem

RP1: Electrostatics in a Si/SiGe quantum bus

Description: Simulation of the electrostatics in a Si/SiGe quantum bus