Electron Shuttling Model
User:Koprucki:Examples:myTest
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Schematic illustration of the Si-QuBus device. The clavier gate electrodes on the top surface generate a moving array of QD potentials. -
Top view on the Si-QuBus with the four different clavier gate sets highlighted in color.
Electron Shuttling Model is a quantum dynamical model of an electron to be shuttled in a silicon quBus device.
Quantum dynamical modeling of an electron to be shuttled, governed by the electric potential generated by the clavier (and other) gates in a Silicon QuBus device. Spin and valley states as well as the respective interactions are neglected. Moreover, the current model is limited to the coherent wave packet evolution and disregards the effects of noise and dissipation.
The Electron Shuttling Model contains the following mathematical expressions:
TODO: This model is applied by the (3 or 4) tasks {#invoke}.
TODO: Eloi: import in backend Spin Qbit Shuttling (Research Problem), Research Field (Semiconductor Physics #invoke)
TODO: The Research Problem (Spin Qbit Shuttling #invoke) is contained in the Research Field (Semiconductor Physics #invoke).
TODO: Burkhard: add assumptions in backend. -> This will be displayed in frontend.
TODO: It would be interesting to show below every formula the quantities contained.
The rest is about testing more around and can be ignored!!!!!
Hello World!
